document number: 83730 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 08-may-08 271 optocoupler, phototransistor output, with base connection h11a1/h11a2/h11a 3/h11a4/h11a5 vishay semiconductors description the h11ax family is an industry standard single channel phototransistor coupler. it includes the h11a1/h11a2/h11a3/h11a4/h11a5 couplers. each optocoupler consists of gallium arsenide infrared led and a silicon npn phototransistor. the isolation performance is accomplished through vishay double molding isolation manufacturing process. compliance to din en 60747-5-5 partial discharge isolation specification is available is by ordering option 1. these isolation processes and the vishay iso9001 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. the devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standar d tube shipping containers. note: designing with data sheet is covered in application note 45. features ? interfaces with common logic families ? input-output coupling capacitance < 0.5 pf ? industry standard dual-in line 6-pin package ? isolation test voltage: 5300 v rms ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? ac mains detection ? reed relay driving ? switch mode power supply feedback ? telephone ring detection ? logic ground isolation ? logic coupling with high frequency noise rejection agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? csa 93751 ? bsi iec 60950; iec 60065 ? din en 60747-5-5 available with option 1 ?fimko note for additional information on the availabl e options refer to option information. i179004 1 2 3 6 5 4 b c e a c n c order information part remarks h11a1 ctr > 50 %, dip-6 h11a2 ctr > 20 %, dip-6 h11a3 ctr > 20 %, dip-6 h11a4 ctr > 10 %, dip-6 h11a5 ctr > 30 %, dip-6 h11a1-x006 ctr > 50 %, dip-6 400 mil (option 6) H11A1-X007 ctr > 50 %, smd-6 (option 7) h11a1-x009 ctr > 50 %, smd-6 (option 9)
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83730 272 rev. 1.5, 08-may-08 h11a1/h11a2/h11a 3/h11a4/h11a5 vishay semiconductors optocoupler, phototransistor output, with base connection note t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute ma ximum ratings for extended periods of the time c an adversely affect reliability. absolute maximum ratings parameter test condition symbol value unit input reverse voltage v r 6v forward current i f 60 ma surge current t 10 s i fsm 2.5 a power dissipation p diss 100 mw output collector emitter breakdown voltage v ceo 70 v emitter base breakdown voltage v ebo 7v collector current i c 50 ma t < 1 ms i c 100 ma power dissipation p diss 150 mw coupler isolation test voltage v iso 5300 v rms creepage distance 7mm clearance distance 7mm insulation thickness between emitter and detector 0.4 mm comparative tracking index per din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature range t stg - 55 to + 150 c operating temperature range t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature max. 10 s, dip soldering: distance to seat- ing plane 1.5 mm t sld 260 c electrical characteristcs parameter test condition part symbol min. typ. max. unit input forward voltage i f = 10 ma h11a1 v f 1.1 1.5 v h11a2 v f 1.1 1.5 v h11a3 v f 1.1 1.5 v h11a4 v f 1.1 1.5 v h11a5 v f 1.1 1.7 v reverse current v r = 3 v i r 10 a capacitance v r = 0 v, f = 1 mhz c o 50 pf output collector emitter breakdown voltage i c = 1 ma, i f = 0 ma bv ceo 30 v emitter collector breakdown voltage i e = 100 a, i f = 0 ma bv eco 7v collector base breakdown voltage i c = 10 a, i f = 0 ma bv cbo 70 v collector emitter leakage current v ce = 10 v, i f = 0 ma i ceo 550na emitter collector capacitance v ce = 0 v c ce 6pf
document number: 83730 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 08-may-08 273 h11a1/h11a2/h11a3/h11a4/h11a5 optocoupler, phototransistor output, with base connection vishay semiconductors note t amb = 25 c, unless otherwise specified. minimum and maximum values were tested requier ements. typical values are characteristic s of the device and are the result of en gineering evaluations. typical values are for information onl y and are not part of the testing requirements. typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - forward voltage vs. forward current fig. 2 - normalized non-saturated and saturated ctr vs. led current coupler collector emitter, saturation voltage i ce = 0.5 ma, i f = 10 ma v cesat 0.4 v capacitance (input-output) c io 0.5 pf current transfer ratio parameter test condition part symbol min. typ. max. unit dc current transfer ratio v ce = 10 v, i f = 10 ma h11a1 ctr dc 50 % h11a2 ctr dc 20 % h11a3 ctr dc 20 % h11a4 ctr dc 10 % h11a5 ctr dc 30 % switching characteristics parameter test condition symbol min. typ. max. unit switching time i c = 2 ma, r l = 100 , v ce = 10 v t on , t off 3s electrical characteristcs parameter test condition part symbol min. typ. max. unit i4n25_01 100 10 1 0.1 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 i f - for w ard c u rrent (ma) v f -for w ard v oltage ( v ) t a = - 55 c t a = 25 c t a = 8 5 c i4n25_02 0.0 0.5 1.0 1.5 0 10 100 i f - led c u rrent (ma) n ctr n ctr(sat) n ctr - n ormalized ctr ctr ce(sat) = 0.4 v v ce = 10 v , i f = 10 ma, t a = 25 c t a = 25 c n ormalized to: 1
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83730 274 rev. 1.5, 08-may-08 h11a1/h11a2/h11a 3/h11a4/h11a5 vishay semiconductors optocoupler, phototransistor output, with base connection fig. 3 - normalized non-saturated and saturated ctr vs. led current fig. 4 - normalized non-saturated and saturated ctr vs. led current fig. 5 - normalized non-saturated and saturated ctr vs. led current fig. 6 - collector emitter current vs. temperature and led current fig. 7 - collector emitter leakage current vs. temperature fig. 8 - normalized ctr cb vs. led current and temperature i4n25_03 100 10 1 0.1 0.0 0.5 1.0 1.5 i f - led c u rrent (ma) n ctr - n ormalized ctr ctr ce(sat) v ce = 0.4 v n ctr n ctr(sat) t a = 50 c n ormalized to: v ce = 10 v , i f = 10 ma, t a = 25 c i4n25_04 100 10 1 0.1 0.0 0.5 1.0 1.5 i f - led c u rrent (ma) n ctr - n ormalized ctr n ctr n ctr(sat) t a = 70 c n ormalized to: ctr ce(sat) v ce = 0.4 v v ce = 10 v , i f = 10 ma, t a = 25 c i4n25_05 100 10 1 0.1 0.0 0.5 1.0 1.5 i f - led c u rrent (ma) n ctr - n ormalized ctr n ctr n ctr(sat) t a = 8 5 c n ormalized to: ctr ce(sat) v ce = 0.4 v v ce = 10 v , i f = 10 ma, t a = 25 c i4n25_06 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 50 c 70 c 8 5 c i f - led c u rrent (ma) i ce - collector c u rrent (ma) 25 c i4n25_07 100 8 0 60 40 20 0 - 20 10 - 2 10 - 1 10 0 10 1 10 2 10 3 10 4 10 5 t am b - am b ient temperat u re (c) i ceo - collector emitter (na) typical v ce = 10 v i4n25_0 8 0.0 0.5 1.0 1.5 25 c 50 c 70 c i f - led c u rrent (ma) n ctr c b - n ormalized ctr c b 0.1 1 10 100 n ormalized to: v cb = 9.3 v , i f = 10 ma, t a = 25 c
document number: 83730 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 08-may-08 275 h11a1/h11a2/h11a3/h11a4/h11a5 optocoupler, phototransistor output, with base connection vishay semiconductors fig. 9 - normalized photocurrent vs. i f and temperature fig. 10 - normalized non-saturated h fe vs. base current and temperature fig. 11 - normalized hfe vs. base current and temperature fig. 12 - propagation delay vs. collector load resistor fig. 13 - switching timing fig. 14 - switching schematic i4n25_09 0. 0.01 1 1 10 i f - led c u rrent (ma) n ormalized photoc u rrent 0.1 1 10 100 i f = 10 ma, t a = 25 c n i b , t a = - 20 c n ormalized to: n i b , t a = 20 c n i b , t a = 50 c n i b , t a = 70 c i4n25_10 0.4 0.6 1.0 1.2 i b - base c u rrent ( a) 1 10 100 1000 i b = 20 a, v ce = 10 v , t a = 25 c 25 c 70 c - 20 c n h fe - n ormalized h fe 0. 8 n ormalized to: i4n25_11 0.0 0.5 1.0 1.5 25 c - 20 c 50 c 70 c n h fe(sat) - n ormalized sat u rated h fe 1 10 100 1000 v ce = 10 v , i b = 20 a t a = 25 c v ce = 0.4 v i b - base c u rrent ( a) n ormalized to: i4n25_12 1 10 100 1000 r l - collector load resistor (k ) t plh - propagation delay ( s) 2.5 2.0 1.5 1.0 0.1 1 10 100 i f = 10 ma, t a = 25 c v cc = 5.0 v , v th = 1.5 v t plh t phl t phl - propagation delay ( s) i4n25_13 i f t r = 1.5 v v o t d t s t f t phl t plh v th i4n25_14 v cc = 5.0 v f = 10 khz df = 50 % r l v o i f = 10 ma
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83730 276 rev. 1.5, 08-may-08 h11a1/h11a2/h11a 3/h11a4/h11a5 vishay semiconductors optocoupler, phototransistor output, with base connection package dimensions in inches (millimeters) i17 8 004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3. 8 1) 0.031 (0. 8 0) min. 0.300 (7.62) typ. 0.031 (0. 8 0) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.01 8 (0.45) 0.022 (0.55) 0.04 8 0.022 (0.55) 0.24 8 (6.30) 0.256 (6.50) 0.335 ( 8 .50) 0.343 ( 8 .70) pin one id 6 5 4 1 2 3 1 8 3 to 9 0.300 to 0.347 (7.62 to 8 . 8 1) 4 typ. iso method a (0.45) min. 0.315 ( 8 .00) 0.020 (0.51 ) 0.040 (1.02 ) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03 ) 0.012 (0.30 ) typ. 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7. 8 ) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) option 6 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0 (4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) option 7 1 8 450
document number: 83730 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 08-may-08 277 h11a1/h11a2/h11a3/h11a4/h11a5 optocoupler, phototransistor output, with base connection vishay semiconductors ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (odss). the montreal protocol (1987) a nd its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. vari ous national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of co ntinuous improvements to elim inate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify t hat our semiconductors are not manufactured with ozone dep leting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating para meters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, dam ages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death as sociated with such unint ended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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